Recent News
September 2012
09/09/2012 Euichul Hwang successfully defends his Ph.D. Thesis. He will be working as an R&D staff engineer in Samsung Advanced Institute of Technology (SAIT), Seoul, Korea
09/09/2012 Euichul Hwang successfully defends his Ph.D. Thesis. He will be working as an R&D staff engineer in Samsung Advanced Institute of Technology (SAIT), Seoul, Korea
May 2012
05/29/2012 Feng Li successfully defends his Ph.D. Thesis. He will be working as a device engineer in Freescale Semiconductor Inc., Austin, Texas.
05/18/2012 Ashkar Ali successfully defends his Ph.D. Thesis. He is now working as a device engineer in Portland Technology Development at Intel, Portland Oregon.
05/07/2012
Yufei Wu was the student marshal for the Department of Electrical Engineering at the spring commencement and selected for their outstanding academic achievement and contributions to engineering student life. She is pursuing her PhD in ECE department of MIT.
05/01/2012
Dheeraj Mohata receives the Melvin P. Bloom Memorial Outstanding Doctoral Research Award in Electrical Engineering.
05/29/2012 Feng Li successfully defends his Ph.D. Thesis. He will be working as a device engineer in Freescale Semiconductor Inc., Austin, Texas.
05/18/2012 Ashkar Ali successfully defends his Ph.D. Thesis. He is now working as a device engineer in Portland Technology Development at Intel, Portland Oregon.
05/07/2012
Yufei Wu was the student marshal for the Department of Electrical Engineering at the spring commencement and selected for their outstanding academic achievement and contributions to engineering student life. She is pursuing her PhD in ECE department of MIT.
05/01/2012
Dheeraj Mohata receives the Melvin P. Bloom Memorial Outstanding Doctoral Research Award in Electrical Engineering.
April 2012
04/23/2012 Datta gave an invited talk at Materials Day 2012 on "Recent Advances in Nanoelectronics for Energy Efficient Information Processing" Pennsylvania State University, University Park, PA. http://www.mri.psu.edu/events/materials_day/2012/speakers/datta.asp
04/16/2012 Ashkar Ali is awarded the Alumni Association Dissertation Awards in recognition of their outstanding achievement in scholarship and professional accomplishments.
04/09/2012 Datta is awarded the Outstanding Research Award at the 2012 Penn State Engineering Alumni Society (PSEAS) Awards.
04/23/2012 Datta gave an invited talk at Materials Day 2012 on "Recent Advances in Nanoelectronics for Energy Efficient Information Processing" Pennsylvania State University, University Park, PA. http://www.mri.psu.edu/events/materials_day/2012/speakers/datta.asp
04/16/2012 Ashkar Ali is awarded the Alumni Association Dissertation Awards in recognition of their outstanding achievement in scholarship and professional accomplishments.
04/09/2012 Datta is awarded the Outstanding Research Award at the 2012 Penn State Engineering Alumni Society (PSEAS) Awards.
March 2012
03/29/2012 Datta gave an invited talk on "Nanoelectronics for Future Energy Efficient Information Processing" University of Illinois, University Park, PA. UIUC Colloqium
03/02/2012 Datta gave an invited talk on "III-V Nanoelectronics for Information Processing" University of California, Berkeley. UCBerkeley Colloqium
03/29/2012 Datta gave an invited talk on "Nanoelectronics for Future Energy Efficient Information Processing" University of Illinois, University Park, PA. UIUC Colloqium
03/02/2012 Datta gave an invited talk on "III-V Nanoelectronics for Information Processing" University of California, Berkeley. UCBerkeley Colloqium
February 2012
02/09/2012 Nidhi Agrawal, Michael Barth, Eugene Freeman, and Arun V. Thathachary successfully cleared their Ph.D. candidacy exams.
02/09/2012 Nidhi Agrawal, Michael Barth, Eugene Freeman, and Arun V. Thathachary successfully cleared their Ph.D. candidacy exams.
December 2011
12/17/2011 Vinay Saripalli successfully defends his Ph.D. Thesis titled "DEVICE AND ARCHITECTURE CO-DESIGN FOR ULTRA-LOW POWER LOGIC USING EMERGING TUNNELING-BASED DEVICES". He will be joining Intel as a Software Engineer in Design and Technology Solutions (DTS) group, Santa Clara California.
12/08/2011
The NDCL at Penn State in collaboration with IQE presented at the 2011 IEDM, Arsenide/Antimonide staggered hetero-junction Tunnel FETs with record on-state current performance.
12/08/2011
The NDCL at Penn State presented at the 2011 IEDM, ballistic and quantum transport in multiple and split gate QFETs respectively.
12/17/2011 Vinay Saripalli successfully defends his Ph.D. Thesis titled "DEVICE AND ARCHITECTURE CO-DESIGN FOR ULTRA-LOW POWER LOGIC USING EMERGING TUNNELING-BASED DEVICES". He will be joining Intel as a Software Engineer in Design and Technology Solutions (DTS) group, Santa Clara California.
12/08/2011
The NDCL at Penn State in collaboration with IQE presented at the 2011 IEDM, Arsenide/Antimonide staggered hetero-junction Tunnel FETs with record on-state current performance.
12/08/2011
The NDCL at Penn State presented at the 2011 IEDM, ballistic and quantum transport in multiple and split gate QFETs respectively.
September 2011
09/08/2011 Ashish Agrawal and Himanshu Madan successfully cleared their Ph.D. candidacy exams.
09/21/2011 Dr. Datta named a distinguished lecturer for the IEEE Electron Devices Society.
09/08/2011 Ashish Agrawal and Himanshu Madan successfully cleared their Ph.D. candidacy exams.
09/21/2011 Dr. Datta named a distinguished lecturer for the IEEE Electron Devices Society.
July 2011
07/30/2011 Ashish Agrawal successfully defended his Masters Thesis titled "EXPERIMENTAL STUDY OF LOW-FIELD TRANSPORT IN HIGHLY CONFINED ARSENIDE-ANTIMONIDE QUANTUM WELL HETEROSTRUCTURES" He is continuing his research at Penn State as a Ph.D. candidate with Prof. Suman Datta.
07/30/2011 Ashish Agrawal successfully defended his Masters Thesis titled "EXPERIMENTAL STUDY OF LOW-FIELD TRANSPORT IN HIGHLY CONFINED ARSENIDE-ANTIMONIDE QUANTUM WELL HETEROSTRUCTURES" He is continuing his research at Penn State as a Ph.D. candidate with Prof. Suman Datta.
June 2011
06/30/2011 Ashkar Ali, 2nd year PhD candidate, wins the Device Research Conference (DRC) Best student paper award for his paper titled "Fermi Level Unpinning of GaSb(100) using Plasma Enhanced ALD Al2O3 Dielectric"
06/30/2011 Ashkar Ali, 2nd year PhD candidate, wins the Device Research Conference (DRC) Best student paper award for his paper titled "Fermi Level Unpinning of GaSb(100) using Plasma Enhanced ALD Al2O3 Dielectric"
May 2011
05/30/2011 Salil Mujumdar successfully defends his Masters Thesis titled "STRAIN ENGINEERING FOR STRAINED P-CHANNEL NON-PLANAR TRI-GATE FIELD EFFECT TRANSISTORS" during May 2011. He is now working as a device engineer at InterMolecular Inc, in San Jose (California).
05/30/2011 Salil Mujumdar successfully defends his Masters Thesis titled "STRAIN ENGINEERING FOR STRAINED P-CHANNEL NON-PLANAR TRI-GATE FIELD EFFECT TRANSISTORS" during May 2011. He is now working as a device engineer at InterMolecular Inc, in San Jose (California).
February 2011
02/25/2011 Dheeraj Mohata is awarded the prestigious IBM Ph.D. Fellowship for the year 2011-12
02/25/2011 R. Bijesh successfully clears his Ph.D. Candidacy exam.
02/25/2011 Ashkar Ali receives summer internship offer from Intel Advanced Transistor and Nanotechnology R&D group in Hillsboro, Oregon for summer 2011.
02/25/2011 Euichul Hwang receives summer internship offer from Samsung, South Korea for summer 2011.
02/25/2011 Dheeraj Mohata is awarded the prestigious IBM Ph.D. Fellowship for the year 2011-12
02/25/2011 R. Bijesh successfully clears his Ph.D. Candidacy exam.
02/25/2011 Ashkar Ali receives summer internship offer from Intel Advanced Transistor and Nanotechnology R&D group in Hillsboro, Oregon for summer 2011.
02/25/2011 Euichul Hwang receives summer internship offer from Samsung, South Korea for summer 2011.
December 2010
12/08/2010
The NDCL at Penn State in collaboration with the Naval Research Laboratory (NRL), demonstrated InAs0.8Sb0.2 QW heterostructure with ultra-thin GaSb cap layer with high electron mobility (13,000 cm2/Vs at Ns= 2x1012 cm-2
). No parallel conduction in channel is observed in this metamorphically grown structure and scattering analysis indicates that the QW thickness is scalable without significant transport degradation. Efficient Fermi level movement near the valence band was also demonstrated in GaSb MOS system using a PEALD Al2O3 dielectric. Long and short channel (LG=100nm) InAs0.8Sb0.2 QW MOSFETs with integrated PEALD high-K gate dielectric were also fabricated with record high 300K drift mobility (~5,700 cm2
/Vs at Ns=2x1012 /cm2) Near enhancement mode short channel (LG=100nm) InAs0.8Sb0.2 QW MOSFET demonstrated at 300K with ION/IOFF ~ 700 over 1V VGS swing with ultra-thin thin barrier and QW in this material system – an important step towards demonstration of low power digital logic circuits. [PDF]
12/08/2010
The NDCL at Penn State in collaboration with the Naval Research Laboratory (NRL), demonstrated InAs0.8Sb0.2 QW heterostructure with ultra-thin GaSb cap layer with high electron mobility (13,000 cm2/Vs at Ns= 2x1012 cm-2
). No parallel conduction in channel is observed in this metamorphically grown structure and scattering analysis indicates that the QW thickness is scalable without significant transport degradation. Efficient Fermi level movement near the valence band was also demonstrated in GaSb MOS system using a PEALD Al2O3 dielectric. Long and short channel (LG=100nm) InAs0.8Sb0.2 QW MOSFETs with integrated PEALD high-K gate dielectric were also fabricated with record high 300K drift mobility (~5,700 cm2
/Vs at Ns=2x1012 /cm2) Near enhancement mode short channel (LG=100nm) InAs0.8Sb0.2 QW MOSFET demonstrated at 300K with ION/IOFF ~ 700 over 1V VGS swing with ultra-thin thin barrier and QW in this material system – an important step towards demonstration of low power digital logic circuits. [PDF]
August 2010
08/30/2010 Saurabh Mookerjea successfully defends his Ph.D. Thesis titled "BAND-TO-BAND TUNNELING FIELD EFFECT TRANSISTOR FOR LOW POWER LOGIC AND MEMORY APPLICATIONS: DESIGN, FABRICATION AND CHARACTERIZATION". He is now working as a device engineer in Logic Technology Division at Intel, Hillsboro Oregon.
08/30/2010 Saurabh Mookerjea successfully defends his Ph.D. Thesis titled "BAND-TO-BAND TUNNELING FIELD EFFECT TRANSISTOR FOR LOW POWER LOGIC AND MEMORY APPLICATIONS: DESIGN, FABRICATION AND CHARACTERIZATION". He is now working as a device engineer in Logic Technology Division at Intel, Hillsboro Oregon.
July 2010
07/01/2010 Himanshu Madan receives internship offer from SEMATECH, Albany for a period of two semesters.
07/01/2010 Himanshu Madan receives internship offer from SEMATECH, Albany for a period of two semesters.
February 2010
02/26/2010 Dheeraj Mohata and Lu Liu successfully cleared their Ph.D. candidacy exams.
02/26/2010 Ashkar Ali is awarded the prestigious IBM Ph.D. Fellowship for the year 2010-11.
02/26/2010 Dheeraj Mohata and Lu Liu successfully cleared their Ph.D. candidacy exams.
02/26/2010 Ashkar Ali is awarded the prestigious IBM Ph.D. Fellowship for the year 2010-11.
October 2009
10/26/2009
Doctoral candidate, Saurabh Mookerjea, will present a paper entitled "Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications," at the 55th annual IEEE International Electron Devices Meeting (IEDM) in December. The research conducted in our group Penn State in collaboration with researchers from Cornell and IQE Inc. was highlighted as a significant late news paper by the IEDM technical program committee. For more information please see:
10/22/2009
Doctoral candidate, Ramakrishnan Krishnan, successfully completed and defended his doctoral thesis entitled "Analysis of Failures in Nanoscale Devices". He will be joining the advanced technology platform group at Taiwan Semiconductor Manufacturing Corporation (TSMC) in Hsinchu, Taiwan. Congratulations to Ramki!
10/22/2009 Undergraduate student, Chad Ostrowski, successfully passed the Engineering Science and Mechanics bachelors' thesis oral exam. His honors thesis was entitled "Exploration of novel heterostructures in compound semiconductors to create energy efficient tunneling transistors". Congratulations to Chad !
10/08/2009 Datta gave an invited talk on "Green Transistors to Green Computing Architectures" University of Hannover, Hannover, Germany. The talk was sponsored by the Institut für Materialien und Bauelemente der Elektronik.
10/06/2009 Datta gave an invited talk on "Small Signal Response of Inversion Layers in High Mobility In0.53Ga0.47As MOSFETs Made with Thin High-k Dielectrics" at the Physics and Technology of High-k Gate Dielectrics symposium at the 216th Meeting of the Electrochemical Society Meeting in Vienna, Austria. http://www.electrochem.org/meetings/biannual/216/216.htm
10/02/2009 Graduate student, Ashkar Ali, successfully passed his doctoral candidacy exam. Congratulations to Ashkar !
10/26/2009
Doctoral candidate, Saurabh Mookerjea, will present a paper entitled "Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications," at the 55th annual IEEE International Electron Devices Meeting (IEDM) in December. The research conducted in our group Penn State in collaboration with researchers from Cornell and IQE Inc. was highlighted as a significant late news paper by the IEDM technical program committee. For more information please see: 
10/22/2009
Doctoral candidate, Ramakrishnan Krishnan, successfully completed and defended his doctoral thesis entitled "Analysis of Failures in Nanoscale Devices". He will be joining the advanced technology platform group at Taiwan Semiconductor Manufacturing Corporation (TSMC) in Hsinchu, Taiwan. Congratulations to Ramki! 10/22/2009 Undergraduate student, Chad Ostrowski, successfully passed the Engineering Science and Mechanics bachelors' thesis oral exam. His honors thesis was entitled "Exploration of novel heterostructures in compound semiconductors to create energy efficient tunneling transistors". Congratulations to Chad !
10/08/2009 Datta gave an invited talk on "Green Transistors to Green Computing Architectures" University of Hannover, Hannover, Germany. The talk was sponsored by the Institut für Materialien und Bauelemente der Elektronik.
10/06/2009 Datta gave an invited talk on "Small Signal Response of Inversion Layers in High Mobility In0.53Ga0.47As MOSFETs Made with Thin High-k Dielectrics" at the Physics and Technology of High-k Gate Dielectrics symposium at the 216th Meeting of the Electrochemical Society Meeting in Vienna, Austria. http://www.electrochem.org/meetings/biannual/216/216.htm
10/02/2009 Graduate student, Ashkar Ali, successfully passed his doctoral candidacy exam. Congratulations to Ashkar !
September 2009
09/28/09 Prof. Datta gave an invited talk on "Tyranny of Non-Ideal Interfaces and Related III-V Transistor Performance" at the International Symposium on Integrated Ferroelectrics and Functionalities (ISIF2) in Colorado Springs, Colorado. http://www.isif.net
09/28/09 Doctoral candidate, Zhao Fang, presented a technical poster on "Sensitivity enhancement of magnetic sensors based on Metglas/PVDF laminates using the flux concentration effect" at the Nanoelectronic Devices for Defense and Security Conference (NANO-DDS) in Fort Lauderdale, Florida. http://www.nano-dds.com/2009/
09/28/09 Prof. Datta gave an invited talk on "Tyranny of Non-Ideal Interfaces and Related III-V Transistor Performance" at the International Symposium on Integrated Ferroelectrics and Functionalities (ISIF2) in Colorado Springs, Colorado. http://www.isif.net
09/28/09 Doctoral candidate, Zhao Fang, presented a technical poster on "Sensitivity enhancement of magnetic sensors based on Metglas/PVDF laminates using the flux concentration effect" at the Nanoelectronic Devices for Defense and Security Conference (NANO-DDS) in Fort Lauderdale, Florida. http://www.nano-dds.com/2009/
August 2009
08/25/09 Datta gave a lecture on "Implication of Non ideal Interfaces for Various III-V Transistor Architecture" at the 6th International Symposium on Advanced Gate Stack Technology in San Francisco, CA, organized by International Sematech. http://www.sematech.org/meetings/announcements/8671/program.htm
08/21/09 Datta teams up with Prof. V. Narayanan of Penn State University to teach an embedded tutorial on "Green transistors to green computing architectures" at the IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED) in San Francisco, CA http://www.islped.org/2009/final_program.pdf
08/20/09 Datta gave a plenary talk on "Low voltage tunnel transistor" at the IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED) in San Francisco, CA http://www.islped.org/2009/final_program.pdf
08/25/09 Datta gave a lecture on "Implication of Non ideal Interfaces for Various III-V Transistor Architecture" at the 6th International Symposium on Advanced Gate Stack Technology in San Francisco, CA, organized by International Sematech. http://www.sematech.org/meetings/announcements/8671/program.htm
08/21/09 Datta teams up with Prof. V. Narayanan of Penn State University to teach an embedded tutorial on "Green transistors to green computing architectures" at the IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED) in San Francisco, CA http://www.islped.org/2009/final_program.pdf
08/20/09 Datta gave a plenary talk on "Low voltage tunnel transistor" at the IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED) in San Francisco, CA http://www.islped.org/2009/final_program.pdf
June 2009
06/22/09 Graduate students, S. Mookerjea and A. Ali, each gave a poster presentation on "Non equilibrium hot carrier transport in band gap engineered tunnel transistors" and "high-k gated, self aligned and directly contacted InAs quantum-well transistors", respectively, at the Device Research Conference held at Penn State University, University Park, PA. http://drc.ee.psu.edu/advanceprog.asp
06/23/09 Datta partnered with Dr. Heike Riel of IBM Zurich to organize a super charged evening rump session entitled "Steep Slope or Slippery Slope". The panelists from Notre Dame Univ., Purdue Univ., Univ. of Michigan and MIT debated on the pros and cons of tunnel transistors from choice of materials to architecture to circuit implications. http://drc.ee.psu.edu/advanceprog.asp
06/22/09 Graduate students, S. Mookerjea and A. Ali, each gave a poster presentation on "Non equilibrium hot carrier transport in band gap engineered tunnel transistors" and "high-k gated, self aligned and directly contacted InAs quantum-well transistors", respectively, at the Device Research Conference held at Penn State University, University Park, PA. http://drc.ee.psu.edu/advanceprog.asp
06/23/09 Datta partnered with Dr. Heike Riel of IBM Zurich to organize a super charged evening rump session entitled "Steep Slope or Slippery Slope". The panelists from Notre Dame Univ., Purdue Univ., Univ. of Michigan and MIT debated on the pros and cons of tunnel transistors from choice of materials to architecture to circuit implications. http://drc.ee.psu.edu/advanceprog.asp
May 2009
05/26/09 Datta gave an online seminar as part of the NRI e-Workshop series on "Tunnel Transistor Architecture and its Viability for Energy Efficient Logic Applications" Abstract: Since 1926 it is well accepted that the continuous nonzero nature of solutions to Schrodinger's wave equation used to represent electrons, even in classically forbidden regions of negative kinetic energy, allows for a finite and tunable probability of tunneling from one classically allowed region to another (for example band to band tunneling in a semiconductor). We have recently initiated the investigation of a novel transistor architecture based on such tunneling mechanism as a step towards exploring steep switching transistors for energy efficient logic applications. In this seminar, I will attempt to address the following topics regarding the tunnel transistor architecture: a) the choice of appropriate materials to tune the transfer characteristics over a specified gate swing b) the characteristic screening lengths to observe saturation in the output characteristics in order to provide gain c) an effective way to estimate the switching speed of such devices considering enhanced Miller capacitance effect and d) the importance of nonequilibrium carrier dynamics on the device terminal characteristics.
05/27/09 Datta gave an invited lecture on "Inter-band Tunnel Transistor Architecture using Narrow Gap Semiconductors," at the Symposium on Graphene and Emerging Materials for Post-CMOS Applications at the Electrochemcial Society Conference in San Francisco, CA.
05/26/09 Datta gave an online seminar as part of the NRI e-Workshop series on "Tunnel Transistor Architecture and its Viability for Energy Efficient Logic Applications" Abstract: Since 1926 it is well accepted that the continuous nonzero nature of solutions to Schrodinger's wave equation used to represent electrons, even in classically forbidden regions of negative kinetic energy, allows for a finite and tunable probability of tunneling from one classically allowed region to another (for example band to band tunneling in a semiconductor). We have recently initiated the investigation of a novel transistor architecture based on such tunneling mechanism as a step towards exploring steep switching transistors for energy efficient logic applications. In this seminar, I will attempt to address the following topics regarding the tunnel transistor architecture: a) the choice of appropriate materials to tune the transfer characteristics over a specified gate swing b) the characteristic screening lengths to observe saturation in the output characteristics in order to provide gain c) an effective way to estimate the switching speed of such devices considering enhanced Miller capacitance effect and d) the importance of nonequilibrium carrier dynamics on the device terminal characteristics.
05/27/09 Datta gave an invited lecture on "Inter-band Tunnel Transistor Architecture using Narrow Gap Semiconductors," at the Symposium on Graphene and Emerging Materials for Post-CMOS Applications at the Electrochemcial Society Conference in San Francisco, CA.
March 2009
03/02/2009 Graduate student, Feng Li, successfully passes the EE written and oral doctoral candidacy exam. Congrats to Feng !
03/02/2009 Graduate student, Feng Li, successfully passes the EE written and oral doctoral candidacy exam. Congrats to Feng !
February 2009
02/20/09 Datta is interviewed by Science Magazine in an article titled "Is Silicon's Reign Nearing Its End?" The article discusses the continued evolution of the high performance CMOS logic technology, focusing particularly on the new materials that have been introduced or proposed and the potential future of the high performance CMOS transistor technology. Article is posted online at http://www.sciencemag.org/cgi/reprint/323/5917/1000.pdf
02/20/09 Datta is interviewed by Science Magazine in an article titled "Is Silicon's Reign Nearing Its End?" The article discusses the continued evolution of the high performance CMOS logic technology, focusing particularly on the new materials that have been introduced or proposed and the potential future of the high performance CMOS transistor technology. Article is posted online at http://www.sciencemag.org/cgi/reprint/323/5917/1000.pdf